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Contact Information
Fang LIN; Jin PAN
Tel:8629-82668155
Email:SCDE@xjtu.edu.cn
Address:NO.28 West Xianning Road, Xi’an, Shaaxi China
Zip code:710049
Conference Program
The 2025 SCDE Program Overview | ||||
Thursday, Jun 5th, 2025 |
Registration (14:00-18:30) | |||
Time | Speakers | |||
Friday Jun 6th,2025 |
8:30-8:45 | Openning Address | ||
8:45-9:15 | Plenary | Hiroshi Kawarada |
Selling points and problems of Vertical Diamond MOSFETs | |
9:15-9:35 | Invited | Jinping Ao | Gallium Nitride-based Microwave Wireless Power Transmission Technology | |
9:35-9:55 | Invited | Guangchao Chen | Possible methods and techniques for preparing and polishing intrinsic CVD diamond wafers over 10-inch | |
9:55-10:10 | Oral | Shuai Xu | Orientation-Dependent Triangular Step Growth during Homoepitaxial Growth of (111) Single-Crystal Diamond | |
10:10-10:25 | Oral | Chuanlong Li | Research on Diamond/Gallium Oxide Heterojunction Alpha Nuclear Battery | |
10:25-10:55 | Tea Break | |||
10:55-11:15 | Invited | Chengming Li | 8-inch CVD diamond plate generated by dual-magnetic field controlled DC Jet CVD | |
11:15-11:35 | Invited | Kaiyue Wang | Photoluminescence studies of optical defects in the irradiated diamond | |
11:35-11:50 | Oral | Han Li | Thermal boundary resistance reduction at Diamond-GaN interface with composite dielectric layers | |
11:50-12:05 | Oral | Yuxiang Du | Diamond Biosensor for Staphylococcal enterotoxin B Detection | |
14:30-14:50 | Invited | Yu Fu | kV-Class Diamond Power MOSFETs | |
14:50-15:10 | Invited | Wei wang | New progress of diamond semiconductors | |
15:10-15:25 | Oral | Shaowei Zhang | Dynamically tunable terahertz perfect absorber and bound states in the continuum via graphene metasurface | |
15:25-15:40 | Oral | Guozhao Ren | Evolution and morphological characteristics of etch pits on diamond single crystal | |
15:40-16:10 | Tea Break | |||
16:10-16:30 | Invited | Leidang Zhou | Internal-Gain X-Ray Detector Based on a SiC NPN Structure | |
16:30-16:50 | Invited | Nan Gao | Predicting doping in diamond and proposing possible applications by first-principles calculation | |
16:50-17:05 | Oral | Yupu Wang | Generic MEMS PDK/TQV for narrow-gap electrostatic process and piezoelectric process | |
17:05-17:20 | Oral | Xixiang Zhao | High Breakdown Voltage Diamond Vertical Schottky Barrier Diode with Mesa Termination and its Combination with Field Plate Termination | |
17:20-18:30 | Poster | |||
18:30~ | Banquet | |||
Saturday Jun 7th,2025 |
8:30-8:50 | Invited | Guomei Wu | Design and Fabrication of High Frequency Gallium Arsenide Compound Semiconductor Lasers |
8:50-9:10 | Invited | Xufang Zhang | Comprehensive analysis of interface and near interface traps in Al2O3/diamond MOS structure |
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9:10-9:30 | invited | Qi Li | Research on modulation doping of neodymium element in single crystal diamond | |
9:30-9:45 | Oral | Yaqi Liang | Electrochemical Detection of Environmental Pollutants by Boron-Doped Diamond Electrodes | |
9:45-10:00 | Oral | Shumiao Zhang | Diamond Schottky Barrier Diode Employing n-SnO2 Junction Termination Extension | |
10:00-10:20 | Tea Break | |||
10:20-10:40 | Invited | Kang Liu | Diamond surface physics | |
10:40-11:00 | Invited | Junjun Wei | ||
11:00-11:20 | Oral | Yida Wu | Doping of Hexagonal Diamond for possible semiconductor material: A first principles investigation | |
11:20-11:35 | Oral | Gemeng Huang | GaN crystal growth on patterned substrates using Na-flux liquid phase epitaxial method | |
11:35-11:50 | Oral | Ronglin Pan | Simultaneous Growth of Four GaN Crystal Sheets Using the Na-Flux Liquid-Phase Epitaxial Method: Under Different Solution Heights | |
14:30-15:00 | Plenary | Tadatomo Suga | ||
15:00-15:20 | Invited | Fengnan Li | Graphite/diamond structure based on in-situ phase transformation engineering | |
15:20-15:40 | Invited | Xinke Liu |
Low cost GaN-on-GaN power devices | |
15:40-15:55 | Oral | Yuesong Liang | Enhancement-mode Hydrogen-Terminated Diamond FET and Their Logic Circuits | |
15:55-16:10 | Oral | Muhua Zhai | Efficient and Tunable Photoinduced moiré lattice with NV centers in diamond | |
16:10-16:30 |
Summary by Hongxing Wang |
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